Li Jiang,Ph.D., J.D.
Dr. Jiang focuses his practice on patent prosecution, PTAB post grant proceedings, client counseling, and litigation in various technical fields covering semiconductors, optoelectronic devices, optical devices, microelectronic devices, electrical circuits, computer software and hardware, telecommunications, and business methods, etc.
Before joining ANOVA Law Group, Dr. Jiang concentrated on patent prosecution, litigation, and client counseling as a technical specialist, student associate, and patent agent at Finnegan, Henderson, Farabow, Garrett & Dunner, LLP, and gained significant expertise in patent prosecution and litigation, including post grant proceedings before the Patent Trial and Appeal Board.
Prior to starting his patent practice, Dr. Jiang had been a successful researcher in the field of semiconductors. While pursuing his Ph.D. at Virginia Polytechnic Institute and State University (Virginia Tech), Dr. Jiang worked as a research assistant in the Department of Materials Science and Engineering, where he focused on the study of performance characteristics of semiconductor quantum dot (QD) lasers. Before entering Virginia Tech, Dr. Jiang had also done a lot of work on semiconductor material growth and device fabrication, including silicon-based devices and III-V compound semiconductor based devices. During his study, Dr. Jiang has gained extensive knowledge on subjects such as semiconductor physics, lasers, LEDs, optical waveguide, materials properties, and electrical circuits.
J.D., George Mason University School of Law
Ph.D., Materials Science and Engineering, Virginia Polytechnic Institute & State University
M.S., Microelectronics and Solid-State Electronics, Institute of Semiconductors, Chinese Academy of Sciences
B.S., Physics, Peking University
Bar and Court Admissions
U.S. Patent and Trademark Office
American Bar Association
PTAB Bar Association
Asian Pacific American Bar Association of DC
Coauthor, “U.S. patent litigation response strategies for small- and medium-sized companies,” Imp-Exp Executive, 2016
Author, “Litigation not related to target CBM patent does not create a ï¿½real and substantial controversy,” AIA Blog, 2016
Coauthor, “How to expedite examination in the U.S.,” China IP, 2013
Coauthor, “Multimode emission and optical power in a semiconductor quantum dot laser,” Nanotechnology, 2008
Coauthor, “Internal-loss-limited maximum operating temperature and characteristic temperature of quantum dot laser,” Laser Physics Letters, 2007
Coauthor, “Excited-state-mediated capture of carriers into the ground state and the saturation of optical power in quantum-dot lasers,” IEEE Photonics Technology Letters, 2006
Coauthor, “InP based long wavelength transmitter OEIC structure grown by MOCVD,” Chinese Journal of Semiconductors, 2005
Coauthor, “Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD,” Journal of Crystal Growth, 2004
English & Mandarin Chinese